t4 - lds -0 175 , rev . 2 (8 /30/13 ) ?201 3 microsemi corporation page 1 of 4 2n3866(a) compliant np n silicon high - frequency transistor qualified per mil -prf- 19500/398 qualified levels : jan, jantx , jan txv and jans description this 2n 3866(a) silicon vhf - uhf amplifier tr ansistor is military qualified up to the jan s level for high - reliability applications. it is also available in a low profile ub package. to - 205a d (formerly to - 39) package also available in : ub package (surface mount) 2n3866(a)ub important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3866 number ? jan , jantx, jantxv and jans qualification s also available per mil - prf - 19500/398 ? rohs compliant applications / benefits ? short leaded to - 205a d package ? lightweight ? military and other high - reliability applications m axim um ratings @ t a = +25 c unless other wise noted parameters / test conditions symbol value unit junction & storage temperature t j , t stg -6 5 to + 20 0 c thermal resistance junction - to - case r ? jc 60 oc /w thermal resistance junction - to - ambient r ? ja 175 oc /w collector C emitter v oltage v ceo 30 v collector C base voltage v cbo 60 v emitter - base voltage v ebo 3.5 v total power dissipation (1) @ t a = +25 oc (1) @ t c = +25 oc (2 ) p t 1.0 2.9 w collector current i c 0.4 a notes : 1. derated l inearly 5.7 1 m w/c for t a > +25 c 2. derated at 16.6 m w/c for t c > +25 c msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
t4 - lds -0 175 , rev . 2 (8 /30/13 ) ?201 3 microsemi corporation page 2 of 4 2n3866(a) mechanical and packaging ? case: hermetically sealed, kovar base, nickel cap ? terminals: gold plate, s older d ip (sn63/pb37) a vailable upon request. note: solder dip will eliminate rohs compliance. ? marking: part number, date code, manufacturers id and serial number ? polarity: np n ? wei ght: approximately 1.064 grams ? see p ackage d imensions on last page. part nomenclature jan 2n3866 (a) reliability level jan = j an level jantx = jantx level jantxv = jantxv level jan s = jan s level blank = commercial forward current transfer ratio selection option jedec type number symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. v be b ase -e mitter voltage: the dc voltage between the base and the emitter. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage betw een the collector and base terminals when the emitter terminal is open - circuited . v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce o collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base terminal is open - circuited. v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v eb o emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 175 , rev . 2 (8 /30/13 ) ?201 3 microsemi corporation page 3 of 4 2n3866(a) electrical characteristics @ t a = +25 c, unless otherwise noted characteristics symbol min max unit of f characteristics collector - emitter breakdown voltage i c = 5 ma v (br)ceo 30 v collector - base breakdown voltage i c = 100 a v (br)cbo 60 v emitter - base breakdown voltage i e = 100 a v (br)ebo 3.5 v collector - emitter cutoff current v ce = 28 v i ceo 20 a collector - emitter cutoff current v ce = 55 v i ces1 100 a on characteristic s (1) forward - current transfer ratio i c = 5 0 m a, v ce = 5 .0 v i c = 360 m a, v ce = 5 .0 v 2n3866 2n3866a 2n3866 2n3866a h fe 15 25 5 8 200 200 collector - emitter saturation voltage i c = 1 0 0 ma , i b = 10 ma v ce(sat) 1.0 v collector - emitter cutoff current C high temp operation v ce = 55 v , t a = + 150 oc i ces2 2.0 ma forward - current transfer ratio C low temperature operation v ce = 5.0 v, i c = 50 ma , t a = - 55 oc 2n3866 2n3866a h fe3 7 12 dynami c characteristics magnitude of common emitter small - sig nal short - circuit forward current transfer ratio i c = 5 0 ma, v ce = 1 5 v, f = 200 mhz 2n3866 2n3866a |h fe | 2.5 4.0 8.0 7.5 output capacitance v cb = 28 v , i e = 0, 100 khz f 1. 0 mhz c obo 3.5 pf power output characteristics power output v cc = 28 v; p in = 0.15 w; f = 400 mhz * v cc = 28 v; p in = 0.075 w; f = 400 mhz * * see figure 4 on mil - prf - 19500 /398 p 1out p 2out 1.0 0.5 2.0 w collector efficiency v cc = 28 v ; p in = 0.15 w; f = 400 mhz v cc = 28 v; p in = 0.075 w; f = 400 mhz n1 n2 45 40 % clamp inductive collector - emitter breakdown voltage v be = - 1.5 v , i c = 40 ma v (br)cex 55 v (1 ) pulse test: p ulse w idth = 300 s, d uty c ycle 2.0% downloaded from: http:///
t4 - lds -0 175 , rev . 2 (8 /30/13 ) ?201 3 microsemi corporation page 4 of 4 2n3866(a) package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for information only. 3. beyond r (radius) maximum, tl shall be held for a minimum length of 0 .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd , cd, and q. 6. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane 0 .054 + 0 .001 -0 .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within 0 .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at m mc. 8 . dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrol led in l1 and beyond ll minimum. 9 . all three leads. 10 . the collector shall be internally connected to the case. 11 . dimension r (radius) applies to both inside corners of tab. 12 . in accordance with asme y14.5m, diameters are equivalent to x symbology. 13 . lead 1 = emitter , lead 2 = base , lead 3 = collector . ltr dimensions inch millimeters notes min max min max cd 0 .3 05 0 .3 35 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 h 0 .009 0 .041 0.23 1.04 j 0 .028 0 .034 0.7 1 0.86 3 k 0 .029 0 .045 0.74 1.14 3 , 4 ld 0 .016 0 .021 0.41 0.53 8, 9 ll 0 .500 0 .750 12.7 19.05 lc 0 .200 tp 5.08 tp 7 lu 0 .016 0 .019 0.41 0.48 8, 9 l1 - 0 .050 - 1.27 8, 9 l2 0 .250 - 6.35 - 8, 9 p 0. 10 0 - 2.54 - 7 q - 0 .0 30 - 0.76 5 r - 0 .010 - 0.25 10 45 tp 45 tp 7 downloaded from: http:///
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